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  this is information on a product in full production. may 2013 docid024630 rev 1 1/9 9 T1610H 16 a triac, high temp erature and logic level datasheet ? production data features ? junction temperature up to 150 c max. ? logic level gate current: 10 ma ? repetitive peak off-state voltage: 600 v ? high i tsm ? high thermal cycling performance applications ? electric heater ? water heater, room heater ? coffee machine ? hand dryer ? thermostat description this clip technology tria c has very high thermal cycling performance, and the design structure presents a higher i tsm . the 150 c maximum junction temperature of th is device offers easier thermal management. its 10 ma gate current offers direct drive from a microcontroller, mainly for resistive load control. g a2 a2 a1 to-220ab (T1610H-6t) a2 a1 g table 1. device summary order code package v drm , v rrm i gt i t(rms) T1610H-6t to-220ab 600 v 10 ma 16 a www.st.com
characteristics T1610H 2/9 docid024630 rev 1 1 characteristics table 2. absolute maximum rating (t j = 25 c, unless otherwise specified) symbol parameter value unit i t(rms) on-state rms current (180 conduction angle) t c = 133 c 16 a i tsm non repetitive surge pe ak on-state current, t j initial = 25 c t p = 16.7 ms 168 a t p = 20ms 160 i 2 ti 2 t value for fusing t p = 10 ms 169 a 2 s di/dt critical rate of rise of on-state current, i g = 2 x i gt , tr ? 100 ns f = 60 hz 100 a/s v drm , v rrm repetitive peak off-state voltage t j = 150 c 600 v v dsm , v rsm non repetitive peak off-state voltage t p = 10 ms 700 v i gm peak gate current t p = 20 s 4 a p gm peak gate power dissipation t p = 20 s 10 w p g(av) average gate power dissipation 1 w t stg t j storage junction temperature range operating junction temperature range -40 to +150 c t l lead temperature for soldering during 10 s 260 c table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit i gt v d = 12 v, r l = 33 ? i - ii - iii min. 0.5 ma max. 10 ma v gt v d = 12 v, rl = 33 ? i - ii - iii max. 1.3 v v gd v d = v drm , r l = 3.3 k ?? t j = 150 c i - ii - iii min. 0.2 v i h i t = 500 ma, gate open ? max. 15 ma i l i g = 1.2 i gt i - ii - iii max. 30 ma dv/dt v d = 67% x v drm , v rrm , gate open t j = 150 c ? min. 100 v/s (dl/dt)c (dv/dt)c = 0.1 v/s t j = 150 c ? min. 8.5 a/ms (dv/dt)c = 10 v/s ? 3 t gt i tm = 13 a, v d = 400 v, i g = 100 ma, di g /dt = 100 ma/s, r l = 30 ? ? typ. 2 s
docid024630 rev 1 3/9 T1610H characteristics table 4. static characteristics symbol test conditions value unit v tm i tm = 22.5 a, t p = 380 s t j = 25 c max. 1.55 v v to threshold voltage t j = 150 c 0.80 v r d dynamic resistance t j = 150 c 22 m ? i drm, i rrm v d = v drm , v r = v rrm t j = 25 c 5 a t j = 150 c 2 ma table 5. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) 1.0 c/w r th(j-a) junction to ambient (ac) 60 c/w figure 1. maximum power dissipation versus average on-state current (full cycle) figure 2. on-state rms current versus case temperature (full cycle) p(w) 0 2 4 6 8 10 12 14 16 18 0246810121416 i (a) t(rms) 180 i (a) t(rms) 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 t (c) c figure 3. on-state rms current versus ambient temperature (free air convection) figure 4. relative variation of thermal impedance versus pulse duration i (a) t(rms) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 t (c) a k = [z / r ] th th 1.0e-02 1.0e-01 1.0e+00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 z th(j-c) z th(j-a) t (s) p
characteristics T1610H 4/9 docid024630 rev 1 figure 5. relative variation of gate trigger current and voltage versus junction temperature (typical values) figure 6. relative variation of holding and latching current versus junction temperature (typical values) i gt ,v gt [t j ]/i gt ,v gt [t j =25 c] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -30 -10 10 30 50 70 90 110 130 150 i gt q1-q2 i gt q3 v gt t j (c) i , i [t ] / i , i [t = 25 c] hl j hl j 0.0 0.5 1.0 1.5 2.0 2.5 -50 -30 -10 10 30 50 70 90 110 130 150 i h i l t (c) j figure 7. relative variat ion of dv/dt immunity versus junction temperature (typical values) figure 8. relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) dv/dt [t ] / dv/dt [t = 150 c] jj 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 50 75 100 125 150 v d =v r =402 v t (c) j (dl/dt) [t ] / (dl/dt) [t = 150 c] jj cc 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 50 75 100 125 150 t (c) j figure 9. relative variatio n of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c figure 10. surge peak on-state current versus number of cycles (di/dt)c[(dv/dt)c]/specified(di/dt)c 0 1 2 3 0.1 1.0 10.0 100.0 (dv/dt c (v/s) ) i (a) tsm 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1 10 100 1000 non repetitive t j initial=25 c non repetitive t j initial=25 c repetitive t c =133 c one cycle t = 20 ms number of cycles
docid024630 rev 1 5/9 T1610H characteristics figure 13. relative variation of leakage current ve rsus junction temperature for different values of blocking voltage (typical values) figure 11. non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i2t figure 12. on-state characteristics (maximum values) i (a), i2t (a2s) tsm 10 100 1000 10000 0.01 0.10 1.00 10.00 di/dt limitation: 100 a/s i tsm i2t t j initial=25 c t (ms) p sinusoidal pulse with width t <10 ms p i tm (a) 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t j max : v to = 0.80 v r d = 22 m  t j =25 c t j =150 c v tm (v) i , i [t ; v , v ] / i , i [t = 150 c; 600 v] drm rrm j drm rrm drm rrm j 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 150 v drm =v rrm =600 v v drm =v rrm =400 v v drm =v rrm =200 v t (c) j
package information T1610H 6/9 docid024630 rev 1 2 package information ? epoxy meets ul94, v0 ? recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 14. to-220ab dimension definitions c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m
docid024630 rev 1 7/9 T1610H package information table 6. to-220ab dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102
ordering information T1610H 8/9 docid024630 rev 1 3 ordering information figure 15. ordering information scheme 4 revision history table 7. ordering information order code marking package weight base qty delivery mode T1610H-6t T1610H-6t to-220ab 2.3 50 tube t16 10 h - 6t current 16 = 16 a rms gate sensitivity 11 0 = 0 ma high temperature voltage 66 = 00 v package t = to220ab triac series delivery mode blank = tube table 8. document revision history date revision changes 31-may-2013 1 first issue.
docid024630 rev 1 9/9 T1610H please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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